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  4. PECVD PSG as a dopant source for industrial solar cells
 
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2006
Conference Paper
Titel

PECVD PSG as a dopant source for industrial solar cells

Abstract
Emitter formation by in-line deposition of a PECVD PSG and subsequent diffusion in an in-line belt furnace is suggested as an alternative to quartz tube diffusion. The PSG deposition process reached excellent layer homogeneities, both across a single wafer and across the whole carrier, resulting in very uniform sheet resistance distributions. Relative standard deviations of 2,5 % have been achieved. Solar cells with the developed emitter reached efficiencies of up to 17,5 % and 16,8 % on textured and untextured Cz-Si respectively.
Author(s)
Benick, J.
Rentsch, J.
Schetter, C.
Voyer, C.
Biro, D.
Preu, R.
Hauptwerk
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM
Konferenz
European Photovoltaic Solar Energy Conference 2006
DOI
10.24406/publica-fhg-353309
File(s)
001.pdf (576.94 KB)
Language
English
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