PECVD PSG as a dopant source for industrial solar cells
Emitter formation by in-line deposition of a PECVD PSG and subsequent diffusion in an in-line belt furnace is suggested as an alternative to quartz tube diffusion. The PSG deposition process reached excellent layer homogeneities, both across a single wafer and across the whole carrier, resulting in very uniform sheet resistance distributions. Relative standard deviations of 2,5 % have been achieved. Solar cells with the developed emitter reached efficiencies of up to 17,5 % and 16,8 % on textured and untextured Cz-Si respectively.