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  4. Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications
 
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2013
Journal Article
Title

Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications

Abstract
This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set and of an ultra-wideband high power amplifier (HPA) transmit module for multi-functional next-generation active electronically scanned antenna radar/electronic warfare/communication applications targeting the frequency range from 6 to 18 GHz. The reported chip set consists of a driver amplifier (DA) MMIC and an HPA MMIC on a high-power gallium-nitride process with high electronic-mobility transistors. The DA reaches a power gain of 11 dB and maximum output power of 2 W, which is sufficient to drive a final stage in a balanced configuration. The HPA reaches a typical output power of 12.5 and 10.6 W in pulsed and continuous wave (CW) operation, respectively. Measurements on the module level indicate 18.5-W typical output power in both pulsed and CW operation.
Author(s)
Schmid, U.
Sledzik, H.
Schuh, P.
Schroth, J.
Oppermann, M.
Brückner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Raay, Friedbert van  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE transactions on microwave theory and techniques  
DOI
10.1109/TMTT.2013.2268055
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride

  • high power amplifiers

  • microwave integrated circuits

  • transmit modules

  • ultra-wideband technology

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