Investigation of the effect of altered defect structure produced by photon assisted the diffusion of As in silicon during thermal anneallagation
SIMS measurements show that PA conditions are able to override differences in diffusion due to damage structure differences originating from 10, 20, 30, 40 keV or 40, 30, 20, 10 keV energy sequences used during implantation. In agreement with earlier reports (3, 5) significant junction depth reduction, ranging up to 60 % was found for PA samples if the 4321 regular and 1234 PA samples are compared. The reversed energy sequence for regular implantations yielded only a 20 % junction depth change. Channeling spectra show a significantly different damage structure only for high doping level PA samples.