2003
Conference Paper
Title

Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method

Abstract
A solid phosphorus source is used to dope 6H-SiC single crystals with phosphorus donors during the sublimation growth. Several characterization techniques are applied to detect the incorporated phosphorus content.
Author(s)
Semmelroth, K.
Schmid, F.
Karg, D.
Pensl, G.
Maier, M.
Greulich-Weber, S.
Spaeth, J.M.
Mainwork
Conference
Language
English