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  4. Co-diffused back-contact back-junction silicon solar cells
 
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2013
Conference Paper
Title

Co-diffused back-contact back-junction silicon solar cells

Abstract
Aiming for industrial solar cell fabrication the ratio of costs to watt peak has to be lowered [1]. This can be achieved by either decreasing the overall solar cell manufacturing costs including material, process and module assembly or increasing solar cell efficiency [2]. One very promising approach for decreasing optical losses on the front side of the cell and thus increasing the solar cell efficiency is to contact solar cells only on the back side. Back-contact back-junction (BC-BJ) solar cells already showed efficiencies over 24% [3]. Since the assembly of this type of solar cell is combined with a high process effort and hence high production costs, simplifications of the process sequences are needed. This can be achieved e.g. by avoiding several cost-intensive high temperature steps by implementing a co-diffusion process. Further the avoidance of the so called gap region - region between the highly doped areas on the cell rear side - would lead to a reduction of process steps.
Author(s)
Keding, Roman  
Stüwe, David
Kamp, Mathias
Reichel, Christian  
Wolf, Andreas  
Woehl, Robert
Borchert, Dietmar  
Reinecke, H.
Biro, Daniel  
Mainwork
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2013  
File(s)
Download (141.62 KB)
DOI
10.4229/28thEUPVSEC2013-2CO.3.5
10.24406/publica-r-381424
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • PV Produktionstechnologie und Qualitätssicherung

  • Silicium-Photovoltaik

  • Dotierung und Diffusion

  • Kontaktierung und Strukturierung

  • Herstellung und Analyse von hocheffizienten Solarzellen

  • Pilotherstellung von industrienahen Solarzellen

  • Rückseitenkontaktsolarzellen

  • MWT

  • EWT

  • IBC

  • Devices

  • Diffusion

  • PECVD

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