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  4. 14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology.
 
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1991
Journal Article
Titel

14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology.

Alternative
14 GHz hoch empfindlicher statischer Frequenzteiler mit geringer Verlustleistung, hergestellt in Quantentrog AlGaAs/GaAs/AlGaAs FET Technologie
Abstract
A 14GHz static frequency divider has been fabricated using an enhancemcnt/depletion 0.3 mym recessed-gate AlGaAs/ GaAS/AlGaAs quantum well FET process. The divider has a power dissipation of 35mW at a supply voltage of 1.80V. The minimum input Power for dividing operation is 8-3 dBm at a maximum input frequency of 14.2GHz, which is lowered to -6.2dBm, when operating at 12.O GHz.
Author(s)
Wennekers, P.
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Köhler, K.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Zeitschrift
Electronics Letters
Thumbnail Image
DOI
10.1049/el:19910732
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • Feldeffekttransistor

  • field effect transist...

  • frequency divider

  • Frequenzteiler

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