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  4. Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
 
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2009
Conference Paper
Title

Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology

Abstract
The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
Author(s)
Zirath, H.
Wadefalk, N.
Kuzhuharov, R.
Gunnarsson, S.E.
Cherednichenko, S.
Angelov, I.
Abbasi, M.
Hansson, B.
Vassilev, V.
Svedin, J.
Rudner, S.
Kallfass, I.
Leuther, Arnulf  
Mainwork
IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009  
Conference
International Symposium on Radio-Frequency Integration Technology (RFIT) 2009  
DOI
10.1109/RFIT.2009.5383658
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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