Recombination at lomer dislocations in multicrystalline silicon for solar cells

Lomer dislocations at small-angle grain boundaries in multicrystalline silicon solar cells have been identified as responsible for the dominating inherent dark current losses. Resulting efficiency losses have been quantified by dark lock-in thermography to be locally up to several percent absolute, reducing the maximum power of the cells. By electron beam induced current measurements and scanning transmission electron microscopy investigations, it is revealed that the strengths of the dark current losses depend on the density of Lomer dislocations at the small-angle grain boundaries.