Advanced lifetime spectroscopy: Unambiguous determination of the electronic properties of the metastable defect in boron-doped Cz-Si

By combining data from temperature- and injectiondependent lifetime spectroscopy (TDLS and IDLS) measured by means of the microwave-detected photoconductance decay technique and the quasi-steady state photoconductance technique, respectively, the exact electronic structure of the metastable defect in standard boron-doped Czochralski (Cz) silicon has been determined. A detailed Shockley-Read-Hall analysis of the entire TDLS curve reveals that the Cz-specific defect acts as an attractive Coulomb center (sigma(ind n)(T)) = sigma(ind n0) T(exp -2)) which is localized in the upper band gap half at E(ind C)-E(ind t) = 0.41 eV and has an electron/hole capture cross section ratio k:= sigma(ind n)/ sigma(ind p) of 9.3. A new routine for data evaluation allows a transparent SRH analysis of IDLS and TDLS data and enables the accuracy and consistency of the determined defect parameters to be assessed. For the metastable defect in boron-doped Cz-Si perfect agreement between IDLS and TDLS has been found, which demonstrates the excellent performance of lifetime spectroscopy.