Effect of deposition temperature on Al0.016In0.003Zn0.981O thin films grown on glass substrates by pulsed laser deposition

The Al0.016Zn0.984O (AZO) and Al0.016In0.003Zn0.981O (AIZO) thin films were grown on Corning 1737 glass substrates by pulsed laser deposition and they were investigated for the structural, electrical, and optical properties as a function of deposition temperature. The crystallinity of the films increases with increasing deposition temperature and exhibits the close relationship with the resistivity of the films. A decrease of carrier concentrations with increasing deposition temperature was attributed to the reduction of the oxygen vacancies existing within the AZO and AIZO films. An increase of the mobility with increasing deposition temperature was attributed to the decrease of the ionized scattering defects such as oxygen vacancies. The crystallinity, resistivity, and optical transmittance of the AIZO films are superior compared with the AZO films in the range of deposition temperature from 25 to 200 degrees C. The resistivity and the optical transmittance at a wavelength of 480 nm in the case of AZO films are approximately 7.3x10(-4) Omega cm and 87%, respectively. The resistivity and the optical transmittance of the AIZO films are approximately 4.5x10(-4) Omega cm and 93%, respectively.