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  4. Landau damped intersubband plasmons in InAs/AlSb quantum wells
 
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1996
Journal Article
Title

Landau damped intersubband plasmons in InAs/AlSb quantum wells

Other Title
Landau-gedämpfte Intersubband-Plasmonen in InAs/AlSb quantum wells
Abstract
We present a combined theoretical and Raman scattering study of coupled intersubband plasmon-LO phonon modes in InAs/AlSb quantum wells, highlighting the importance of the InAs conduction band nonparabolicity in such systems. We demonstrate that under the illumination conditions of the Raman measurements, electron densities can be as high as 4 x 10(exp12) cm(exp -2) and give evidence of Landau damping of intersubband plasmons.
Author(s)
Richards, D.
Wagner, J.
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Solid State Communications  
DOI
10.1016/0038-1098(96)00370-5
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InAs/AlSb quantum well

  • Intersubband-Plasmon

  • raman spectroscopy

  • Ramanspektroskopie

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