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  4. Two-wavelength transmission: A rapid and precise method for measuring the light absorption in semiconductors
 
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1991
Journal Article
Title

Two-wavelength transmission: A rapid and precise method for measuring the light absorption in semiconductors

Abstract
By means of two-wavelength transmission the reflection and scattering losses at surfaces are cancelled out experimentally. A signal which is directly proportional to the light absorption is derived and measured in real time. The performance of the method for measuring the concentrations of EL2 in GaAs, of Fe in InP and of the thicknesses of InGaAsP/InP layers is demonstrated.
Author(s)
Sartorius, B.
Brandstattner, M.
Venghaus, H.
Journal
Applied surface science  
Conference
Symposium D on Analytical Techniques for the Characterization of Compound Semiconductors 1990  
European Materials Research Society (Fall Conference) 1990  
DOI
10.1016/0169-4332(91)90200-4
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • iron

  • optical constants

  • point defects

  • reflectivity

  • reflection losses

  • light absorption

  • two-wavelength transmission

  • scattering losses

  • el2

  • GaAs

  • inGaAsp-InP

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