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1998
Conference Paper
Title
InGaAs photodetector with integrated biasing network for mm-wave applications
Abstract
xi A waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor significantly reduces the output standing wave ratio. Application of the photodetector in a mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achieved.
Keyword(s)
gallium arsenide
iii-v semiconductors
indium compounds
integrated optoelectronics
microwave links
microwave photonics
millimetre wave detectors
mobile communication
optical planar waveguides
optical receivers
p-i-n photodiodes
photodetectors
waveguide integrated photodetector
integrated biasing network
external responsivity
bandwidth
output standing wave ratio
linear operation
70 GHz
64 GHz
InGaAs