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  4. InGaAs photodetector with integrated biasing network for mm-wave applications
 
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1998
Conference Paper
Title

InGaAs photodetector with integrated biasing network for mm-wave applications

Abstract
xi A waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor significantly reduces the output standing wave ratio. Application of the photodetector in a mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achieved.
Author(s)
Trommer, D.
Umbach, A.
Unterborsch, G.
Mainwork
Tenth International Conference on Indium Phosphide and Related Materials 1998. Conference proceedings  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 1998  
DOI
10.1109/ICIPRM.1998.712456
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • integrated optoelectronics

  • microwave links

  • microwave photonics

  • millimetre wave detectors

  • mobile communication

  • optical planar waveguides

  • optical receivers

  • p-i-n photodiodes

  • photodetectors

  • waveguide integrated photodetector

  • integrated biasing network

  • external responsivity

  • bandwidth

  • output standing wave ratio

  • linear operation

  • 70 GHz

  • 64 GHz

  • InGaAs

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