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  4. High-gain quantum-dot semiconductor optical amplifier for 1300 nm
 
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2003
Journal Article
Title

High-gain quantum-dot semiconductor optical amplifier for 1300 nm

Abstract
Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a -well" (DWELL) gain region having an aggregate dot density of approximately 8 x1 0 (hoch)11 CM(hoch)-2, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 ma, and the output saturation power is 9 dBm. The dependence of the amplifier parame ters on the pump current and the gain recovery dynamics has also been studied.
Author(s)
Bakonyi, Z.
Hui, S.
Onishchukov, G.
Lester, L.F.
Gray, A.L.
Newell, T.C.
Tünnermann, A.
Journal
IEEE Journal of Quantum Electronics  
DOI
10.1109/JQE.2003.818306
Language
English
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Keyword(s)
  • semiconductor lasers; semiconductor optical amplifiers

  • quantum-dot optical amplifier

  • semiconductor lasers

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