Embedding Solutions for vertical SiC and GaN Power Devices

This paper presents further development of a module concept for Wide Bandgap (WBG) power devices. By embedding WBG power devices in ceramic substrates, high performance of the complete package can be achieved to fully make use of their potentials. In this work, optimizations for design concept and manufacturing processes have been performed to eliminate risk of failures, especially when embedding thin and sensitive devices with fine pad structures. Warpage of package and deformation of devices have been successfully minimized by adjusting volume and layer thickness of die attach and embedded components. Furthermore, processes such as die attach applying, pre-drying and die bonding have been evaluated and improved. Thus, a significant increase of solder and Ag sinter joint quality, especially in fine chip pad areas, have been achieved. Embedded WBG packages with single chip and half bridge topology have been successfully produced and tested in terms of their functionality.