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  4. K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology
 
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2014
Conference Paper
Title

K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology

Abstract
This paper presents two power amplifier MMICs which are designed for operation at K-band (19 GHz). They are realized using a 100nm AlGaN/GaN HEMT technology which, in addition to coplanar lines, supports microstrip lines to cover the needs of applications between X- and Ka-band frequencies. The presented MMICs are among the first power amplifiers designed with the microstrip library and are used to evaluate the technology's performance at K-band. Both amplifiers are singlestage designs, where one uses only a single 8 x 75 µm HEMT cell and the other one uses two cells with power-combining. In largesignal measurements, the amplifiers reached, respectively, peak efficiencies of 36% and 38% associated with output powers of 0.93W and 1.48W and drain efficiencies of 61% and 51%.
Author(s)
Friesicke, Christian  
Jacob, A.F.
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
20th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2014  
Conference
International Conference on Microwaves, Radar and Wireless Communications (MIKON) 2014  
DOI
10.1109/MIKON.2014.6899877
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride

  • high power amplifiers

  • MMICs

  • K-band

  • satellite communication

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