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  4. Description of arsenic and boron profiles implanted into SiO2, Si3N4, and Si using Pearson distributions with four moments.
 
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1981
Journal Article
Title

Description of arsenic and boron profiles implanted into SiO2, Si3N4, and Si using Pearson distributions with four moments.

Other Title
Beschreibung von Arsen- und Borprofilen implantiert in SiO2, Si3N4 und Si mittels Pearsonverteilung mit vier Momenten
Author(s)
Jahnel, J.
Ryssel, H.
Prinke, G.
Hoffmann, K.
Mueller, K.
Henkelmann, R.
Biersack, J.P.
Journal
Nuclear instruments and methods  
Language
English
IFT  
Keyword(s)
  • Arsenprofil

  • Borprofil

  • implantation

  • Pearson-Verteilung

  • Profil

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