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  4. Quality control of bond strength in low-temperature bonded wafers
 
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2012
Conference Paper
Title

Quality control of bond strength in low-temperature bonded wafers

Abstract
Low-temperature plasma activated wafer bonding is an important technology for the 3D integration of semiconductor devices, such as sensors and CMOS devices integrated on opposite sides on the same chip. In a volume production environment, monitoring the bond strength is essential to the overall product quality. In this publication, commonly used methods for bond strength measurement and their relative advantages and disadvantages for quality control are compared with a novel technique of sample preparation for tensile testing.
Author(s)
Siegert, J.
Cassidy, C.
Schrank, F.
Gerbach, R.
Naumann, F.
Petzold, M.
Mainwork
Semiconductor Wafer Bonding 12. Science, Technology, and Applications  
Conference
International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications 2012  
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012  
DOI
10.1149/05007.0253ecst
Additional link
Full text
Language
English
Fraunhofer-Institut für Werkstoffmechanik IWM  
Keyword(s)
  • low-temperature plasma

  • 3D integration of semiconductor devices

  • scanning acoustic microscopy

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