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  4. Homoepitaxial growth of single crystalline CVD-diamond
 
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2016
Journal Article
Title

Homoepitaxial growth of single crystalline CVD-diamond

Abstract
The influence of temperature, pressure and holder geometry on the homoepitaxial single crystalline diamond growth in a microwave-assisted chemical vapor deposition reactor will be introduced and discussed in detail. Optimized diamond growth conditions were determined for homoepitaxy on (100)-oriented high-temperature high-pressure (HPHT) seed crystals using Raman scattering and confocal-micro-photoluminescence spectroscopy measurements.
Author(s)
Widmann, C.J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Müller-Sebert, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lang, Nicola  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Nebel, C.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Diamond and Related Materials  
DOI
10.1016/j.diamond.2015.12.016
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Homoepitaxial diamond growth

  • (100)-oriented seeds

  • microwave assisted chemical vapor deposition

  • Alpha parameter

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