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  4. Thermal time constants in SOI-MOSFETs
 
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1991
Conference Paper
Title

Thermal time constants in SOI-MOSFETs

Abstract
Time constants in the 100ns range have been reported for bulk MOS. This seems to be contradictory to 1-10 fs measured for SOIMOX (and own measurements) when keeping physical background of the stationary behaviour in mind. We now present detailed theoretical considerations and a first order analytical model for the dynamical behaviour of self heating.
Author(s)
Berger, M.
Burbach, G.
Mainwork
International SOI Conference '91. Proceedings  
Conference
International SOI Conference 1991  
DOI
10.1109/SOI.1991.162838
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • Eigenerwärmung

  • SOI-Transistor

  • Wärmeleitungsgleichung

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