Superior depth resolution of indium in (Al, In, Ga) N structures

The (Al, Ga, In) N material system has recently found much interest for microelectronic and optoelectronic devices. Heterostructures of this system have been used to fabricate green to ultraviolet fight emitting diodes and lasers. SIMS depth profiling has been indispensible for the analysis of the component profiles to characterize the device structure. Depth profiles of fine InGaN/GaN multilayer structures were recorded by SIMS. In this paper, the energy dependence of the depth resolution of In in InGaN/GaN quantum well (QW) structures is investigated taking roughness effects into account. The depth resolution is compared with the corresponding data in the arsenide material system by investigation of InGaAs/GaAs QWs.