Lateral carrier profile for mesa-structured InGaAs/GaAs lasers
Ladungsträgerprofil in mesa-strukturierten InGaAs/GaAs-Lasern
We study the influence of lateral carrier diffusion on the properties of In(0.35)Ga(0.65)As/GaAs multiple quantum well lasers by comparing theoretical and experimental results. A model including the carrier diffusion terms into the rate equations has been used to calculate the dc and small-signal lateral profiles for both unconfined and confined carriers in mesa waveguide devices. The theoretical results were compared with experimental results of the frequency dependence of the subthreshold electrical impedance and small-signal spontaneous emission, and with the measured threshold currents for lasers with different mesa widths. The comparison yielded an estimation for the nonradiative and radiative recombination coefficients, the ambipolar diffusion constant, and the external surface recombination velocity.