Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers

InP-based double heterojunction bipolar transistors (DHBTs) and aluminum free 14xx nm high power lasers were grown in a multiwafer solid source phosphorus molecular beam epitaxy system. The growth of InP, carbon-doped InGaAs, and quaternary InGaAsP was studied in detail. DHBTs display a common emitter current gain Beta of 65. Cutoff frequencies values of more than 200 GHz for both f(ind t) and f(ind max) have been achieved. Tapered diode lasers reach continuous wave output power levels of 1.5 W at room temperature.