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  4. Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs
 
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2007
Journal Article
Title

Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs

Other Title
Barrieren- und Quantenfilm-gepumpte GaSb-Basierende VECSEL mit einer Emissionswellenlänge von 2.3 µm
Abstract
We report on recent advances in the performance of GaSb-based optically-pumped vertical-external-cavity surface-emitting lasers (VECSELs) emitting at wavelengths around 2.3 µm. Both barrier and in-well pumped VECSELs have been fabricated and analysed. Both variants incorporate a diamond intra-cavity heat spreader as an efficient means for heat extraction from the active region. For barrier-pumping, a maximum output power of 1.5 W with a beam propagation factor of M2 <= 3 has been achieved at a heat sink temperature of -20°C. Using in-well pumping at 1.96 µm, the efficiency could be more than doubled, compared to barrier pumping, due to the significantly reduced quantum deficit, yielding a slope efficiency of 31% at a heat sink temperature of 10°C.
Author(s)
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schulz, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ritzenthaler, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Manz, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wild, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physica status solidi. C  
DOI
10.1002/pssc.200674274
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • semiconductor

  • Halbleiter

  • optical pumping

  • optisches Pumpen

  • semiconductor disc laser

  • Halbleiter-Scheibenlaser

  • infrared laser

  • Infrarot-Laser

  • III-V semiconductor

  • III-V Halbleiter

  • group-III-antimonides

  • Gruppe III-Antimonide

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