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  4. Semiconductor gas sensor compatibility with CMOS technologies
 
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2003
Conference Paper
Title

Semiconductor gas sensor compatibility with CMOS technologies

Abstract
This paper describes the development of a technological process that allows the integration of gas sensors and thin film CMOS circuitry. The main technological points for the integration of gas sensors in a standard CMOS process and the effects on the full process will be described. A set of preliminary tests have been done prior to the definition of a CMOS compatible process forý-structures and a complete test of sensitive materials are presented in order to determine the materials with most appropriate annealing temperatures for CMOS compatibility. Results show that gas sensors can be integrated with their circuitry, although require of special materials and non-CMOS standard processing as post-processing sequences.
Author(s)
López-Bosque, M.
Plaza, J.A.
Dantander, J.
Gracia, I.
Cane, C.
Wöllenstein, J.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Moretton, E.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Lambrecht, A.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Schjolberg-Henriksen, K.
Mainwork
Smart Sensors, Actuators, and MEMS. Proceedings  
Conference
Smart Sensors, Actuators, and MEMS 2003  
DOI
10.1117/12.499016
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
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