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  4. First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
 
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2018
Conference Paper
Title

First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth

Abstract
We report on the first-ever GaN power amplifier MMICs covering the full W-band (75-110 GHz). They can provide more than 8 dB (3-stage version) and 11 dB (4-stage) of gain over 50 GHz of bandwidth. The average output power and power-added efficiency of the 3-stage PA over 70-110 GHz are 26.2dBm and 6.5 %, respectively, while for the 4-stage PA they are 26.6dBm and 5.2 %, respectively. Additionally, in this work we introduce for the first time a novel layout of a radial stub, able to deliver -15 dB rejection bandwidth of 28.7 %, which is nearly a factor of two improvement over the conventional radial stub without any substantial area penalty. Applying this type of stub in the design allowed for a significant boost of the overall bandwidth. Due to their unique combination of bandwidth and output power, these amplifiers could be a suitable building block for wideband communication, measurement, or phased-array systems.
Author(s)
Cwiklinski, Maciej
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Friesicke, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lozar, Roger  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, Sandrine  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE MTT-S International Microwave Symposium, IMS 2018  
Conference
International Microwave Symposium (IMS) 2018  
DOI
10.1109/MWSYM.2018.8439170
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • broadband

  • gallium nitride (GaN)

  • high electron mobility transistor (HEMT)

  • monolithic microwave integrated circuit (MMIC)

  • power amplifier (PA)

  • radial stub

  • W-band (75-110 GHz)

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