1997
Conference Paper
Title

MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

Abstract
High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on mesa structures demonstrates favourable conditions for butt-coupling integration schemes.
Author(s)
Paraskevopoulos, A.
Kunzel, H.
Bottcher, J.
Urmann, G.
Hensel, H.J.
Bozbek, A.
Mainwork
Conference
DOI
Language
English
Keyword(s)