Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.

A GaAs/AlxGa1-xAs multiple quantum well laser with an electrical modulation bandwidth exceeding 15 GHz has been fabricated. Optimised design of the waveguide, including development of high Al mole fraction (x equal 0.8) cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.