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  4. Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.
 
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1991
Journal Article
Titel

Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.

Alternative
Vertikaler kompakter 15 GHz GaAs/AlGaAs multiple quantum well Laser, hergestellt mittels MBE
Abstract
A GaAs/AlxGa1-xAs multiple quantum well laser with an electrical modulation bandwidth exceeding 15 GHz has been fabricated. Optimised design of the waveguide, including development of high Al mole fraction (x equal 0.8) cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.
Author(s)
Ralston, J.D.
Tasker, P.J.
Zappe, H.P.
Esquivias, I.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Gallagher, D.F.G.
Zeitschrift
Electronics Letters
Thumbnail Image
DOI
10.1049/el:19911071
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • GaAs

  • Halbleiterlaser

  • high frequency modulation

  • Hochfrequenzmodulation

  • quantum wells

  • semiconductor laser

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