• English
  • Deutsch
  • Log In
    Password Login
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. N-type multicrystalline silicon: A stable, high lifetime material
 
  • Details
  • Full
Options
2003
Conference Paper
Titel

N-type multicrystalline silicon: A stable, high lifetime material

Abstract
An investigation of n-type multicrystalline silicon grown by directional solidification has produced several important findings: i) demonstration of effective phosphorus gettering; ii) achievement of minority carrier lifetimes above one millisecond; iii) verification of good stability under illumination. The lifetimes after gettering show a strong dependence on doping: 1.6ms for 2.3cm, 500s for 0.9cm and 100s for 0.36cm, respectively. Lifetime mapping by infrared carrier density imaging has revealed a large surface variability of this parameter, which is detrimental for large area devices. A minor degradation of the lifetime after light exposure has been observed for the highest lifetime regions, while other wafers and regions remained essentially stable.
Author(s)
Cuevas, A.
Riepe, S.
Kerr, M.J.
Macdonald, D.H.
Coletti, G.
Ferrazza, F.
Hauptwerk
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B
Konferenz
World Conference on Photovoltaic Energy Conversion (WCPEC) 2003
PV Science and Engineering Conference 2003
PV Specialists Conference 2003
European PV Solar Energy Conference 2003
Thumbnail Image
Language
English
google-scholar
Fraunhofer-Institut für Solare Energiesysteme ISE
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022