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  4. N-type multicrystalline silicon: A stable, high lifetime material
 
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2003
Conference Paper
Title

N-type multicrystalline silicon: A stable, high lifetime material

Abstract
An investigation of n-type multicrystalline silicon grown by directional solidification has produced several important findings: i) demonstration of effective phosphorus gettering; ii) achievement of minority carrier lifetimes above one millisecond; iii) verification of good stability under illumination. The lifetimes after gettering show a strong dependence on doping: 1.6ms for 2.3cm, 500s for 0.9cm and 100s for 0.36cm, respectively. Lifetime mapping by infrared carrier density imaging has revealed a large surface variability of this parameter, which is detrimental for large area devices. A minor degradation of the lifetime after light exposure has been observed for the highest lifetime regions, while other wafers and regions remained essentially stable.
Author(s)
Cuevas, Andrés
Riepe, Stephan  
Kerr, M.J.
MacDonald, Daniel
Coletti, Gianluca
Ferrazza, Francesca
Mainwork
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B  
Conference
World Conference on Photovoltaic Energy Conversion (WCPEC) 2003  
PV Science and Engineering Conference 2003  
PV Specialists Conference 2003  
European PV Solar Energy Conference 2003  
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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