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2019
Journal Article
Title
Electron paramagnetic resonance characterization of aluminum ion implantation induced defects in 4H-SiC
Abstract
Deep-level defects in silicon carbide (SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminum ion-implanted 4H-SiC after high-temperature annealing were studied using electron paramagnetic resonance (EPR) spectroscopy at temperatures of 77 K and 123 K under different illumination conditions. Results showed that the main defect in aluminum ion-implanted 4H-SiC was the positively charged carbon vacancy (VC+), and the higher the doping concentration was, the higher was the concentration of VC+. It was found that the type of material defect was independent of the doping concentration, although more VC+ defects were detected during photoexcitation and at lower temperatures. These results should be helpful in the fundamental res earch of p-type 4H-SiC fabrication in accordance with functional device development.
Author(s)
Wang, Xiuhong
State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, Tianjin 300072, China
Xu, Zongwei
State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, Tianjin 300072, China
Dong, Bing
State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, Tianjin 300072, China
Song, Le
State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, Tianjin 300072, China
Tee, Clarence Augustine T.H.
Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia; Centre of Advanced Research Enabler Facility, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia
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