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  4. InGaAsSb(Gd)/InAsSbP double heterostructure lasers (Lambda = 3.0-3.3 µm) for diode laser spectroscopy
 
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2000
Journal Article
Title

InGaAsSb(Gd)/InAsSbP double heterostructure lasers (Lambda = 3.0-3.3 µm) for diode laser spectroscopy

Author(s)
Aidaraliev, M.
Beyer, T.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Zotova, N.V.
Karandashev, S.A.
Matveev, B.A.
Remennyi, M.A.
Stus, N.M.
Talalakin, G.N.
Journal
Semiconductors  
DOI
10.1134/1.1188086
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
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