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  4. High-power InP-based waveguide integrated modified uni-traveling-carrier photodiodes
 
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2017
Journal Article
Titel

High-power InP-based waveguide integrated modified uni-traveling-carrier photodiodes

Abstract
We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and 120 GHz. The balanced PD chip has a 3 dB-bandwidth of 80 GHz and generates 2 dBm RF output power at this frequency.
Author(s)
Zhou, G.
Runge, P.
Keyvaninia, S.
Seifert, S.
Ebert, W.
Mutschall, S.
Seeger, A.
Li, Q.L.
Beling, A.
Zeitschrift
Journal of Lightwave Technology
Konferenz
Optical Fiber Communication Conference and Exposition (OFC) 2016
Thumbnail Image
DOI
10.1109/JLT.2016.2591266
Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
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