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  4. Static and dynamic properties of multi-section InGaN-based laser diodes
 
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2012
Journal Article
Title

Static and dynamic properties of multi-section InGaN-based laser diodes

Abstract
We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the AS and the internal piezoelectric and spontaneous polarization fields inherent to c-plane InGaN MQWs, the devices exhibit non-linear non-monotonic variations of the threshold current due to the quantum-confined Stark effect that takes place in the AS MQWs. We report on how this effect tailors the lasing characteristics and lasing dynamics, leading from a steady-state cw lasing regime for an unbiased AS to self-pulsation and Q-switching regimes at high negative absorber bias.
Author(s)
Sulmoni, L.
Lamy, J.-M.
Dorsaz, J.
Castiglia, A.
Carlin, J.F.
Scheibenzuber, W.G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwarz, U.T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zeng, X.
Boiko, D.L.
Grandjean, N.
Journal
Journal of applied physics  
DOI
10.1063/1.4768163
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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