1992
Journal Article
Title

MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices

Abstract
The authors report on MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices, which require abrupt compositional and doping interfaces. Strongly coupled InGaAs/InP Wannier superlattices with a large number of periods show excellent photoluminescence quality and surface morphology. In addition, band-filling effects with very low leakage current density are demonstrated by incorporating InAlAs barrier layers into InGaAsP/InP modulation doped electron transfer structures.
Author(s)
Agrawal, N.
Franke, D.
Grote, N.
Reier, F.W.
Schroeter-Janssen, H.
Journal
Conference
DOI
Language
English
Keyword(s)