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  4. 20 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.
 
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1991
Journal Article
Title

20 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.

Other Title
20 Gbit/s 2 zu 1 Multiplexer unter Verwendung von Doppel Puls dotiertem Quantum Well GaAs/AlGaAs Transistoren mit einer Gate-Länge von 0.3 mym
Abstract
A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3Mym gate length. First results show a data rate of over 20 Gbit/s at 5 V supply voltage and 250 mW power consumption. The output voltage swing is adjustable between 0.3 V and 0.8 V for a 50 Ohm load. The output level can be varied between plus1 V an minus1 V. Comparison between simulation and measurement shows very good agreement.
Author(s)
Nowotny, U.
Lang, M.
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Berroth, M.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Microelectronic engineering  
DOI
10.1016/0167-9317(91)90237-8
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • communication system

  • E/D Transistor

  • high-speed switch

  • Hochgeschwindigkeitsschalter

  • Kommunikationssystem

  • multiplexer

  • source coupled fet logic

  • test equipment instrumentation

  • Testgerät

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