2013
Journal Article
Title

Low temperature grown be-doped InGaAs/InAlAs photoconductive antennas excited at 1030 nm

Abstract
We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material's relaxation time constants.
Author(s)
Dietz, R.J.B.
Wilk, R.
Globisch, B.
Roehle, H.
Stanze, D.
Ullrich, S.
Schumann, S.
Born, N.
Koch, M.
Sartorius, B.
Schell, M.
Journal
DOI
Language
English