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  4. 28-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.
 
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1993
Journal Article
Title

28-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.

Other Title
28-51 GHz dynamischer Frequenzteiler mit 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs
Abstract
The design and performance of a 28 - 51 GHz dynamic frequency divider based on pseudomorphic Alsub0.2Gasub0.8As/Insub0.25Gasub0.75As MODFETs with 0.15Mym mushroom-shaped gates are presented. The circuit has a power consumption of approximately equal to 440 mW and a chip area of approximately equal to 200 x 220 My square meter.
Author(s)
Thiede, A.
Tasker, P.J.
Hülsmann, A.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Berroth, M.
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Nowotny, U.
Journal
Electronics Letters  
DOI
10.1049/el:19930622
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • AlGaAs/InGaAs

  • dynamic circuit

  • dynamische Schaltung

  • field effect transistor

  • frequency divider

  • Frequenzteiler

  • HEMT

  • pseudomorphe MODFET

  • pseudomorphic MODFET

  • semiconductor device

  • semiconductor material

  • transistor

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