Optimization of the SEM working conditions: EsB detector at low voltage

Material contrast in scanning electron microscopy (SEM) is studied for several kinds of samples with an energy selective backscattered (EsB) electron detector using low voltage. The working conditions are optimized for every specimen and the contrast is quantified, in order to investigate the influence of the most important parameters on the performance: the primary beam voltage, the grid voltage of the EsB detector, and the working distance. Furthermore, strategies to avoid undesirable beam-induced sample damage like shrinkage in organosilicate glass (OSG) thin films or charging in polymer samples are discussed.