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  4. Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy
 
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2024
Journal Article
Title

Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy

Abstract
Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10−3 Ωcm to 102 Ωcm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution.
Author(s)
Hennig, Joshua
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Klier, Jens  
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Duran, Stefan
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Hsu, Kuei-Shen
Beyer, Jan
Röder, Christian
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Beyer, Franziska
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Schüler, Nadine
Vieweg, Nico
Dutzi, Katja
Freymann, Georg von  
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Molter, Daniel  
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Journal
Optics Express  
Open Access
DOI
10.1364/OE.519564
Language
English
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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