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  4. Measured optical losses of Sc doped AlN waveguides
 
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2024
Journal Article
Title

Measured optical losses of Sc doped AlN waveguides

Abstract
Although Sc doped AlN (ScAlN) has been used extensively in micro-electro-mechanical systems (MEMS) devices and more recently in optical devices, there have not been thorough studies of its intrinsic optical losses. Here we explore the optical losses of the Sc0.30Al0.70N waveguide system by observing racetrack resonator waveguide quality factors. Using a partial physical etch, we fabricate waveguides and extract propagation losses as low as 1.6 ± 0.3 dB/cm at wavelengths around 1550 nm, mostly dominated by intrinsic material absorption from the Sc0.30Al0.70N thin film layer. The highest quality factor of the resonators was greater than 87,000. The propagation loss value is lower than any value previously published and shows that this material can be broadly used in optical modulators without significant loss.
Author(s)
Friedman, Benjamin
Electrical and Computer Engineering
Barth, Stephan  
Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik FEP  
Schreiber, Tom
Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik FEP  
Bartzsch, Hagen  orcid-logo
Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik FEP  
Bain, J.
Electrical and Computer Engineering
Piazza, G.
Electrical and Computer Engineering
Journal
Optics Express  
Open Access
DOI
10.1364/OE.511606
Language
English
Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik FEP  
Keyword(s)
  • MEMS

  • optical devices

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