pnp-type InP/InGaAsP/InP bipolar transistor

A pnp double-heterostructure InGaAsP/InP bipolar transistor was fabricated which is capable of bilateral operation. Forward and reverse current gains of about 15 and 5, respectively, were achieved. In the emitter-up configuration, and offset voltage of 1 V, believed to be due to the valence band discontinuity at the base/collector heterojunction, occurs in the IC/VCE characteristics.