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  4. Electro-optic investigation of the Coherent Hall Effect in semiconductor superlattices
 
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2005
Journal Article
Title

Electro-optic investigation of the Coherent Hall Effect in semiconductor superlattices

Other Title
Elektrooptische Untersuchung des kohärenten Hall-Effekts in Halbleiterübergittern
Abstract
After the first observation of the Coherent Hall Effect in a GaAs/Al(0.3)Ga(0.7)As superlattice by means of THz-emission spectroscopy, the dynamics of impulsively excited electron wavepackets in crossed electric and magnetic fields has now been investigated in more detail by reflective electro-optic sampling (REOS). In agreement with the predictions of a semiclassical model, the experiments show the existence of two strictly separated regimes of charge-carrier motion depending on the ratio E/B of applied electric and magnetic field. Both, the magneto-Bloch regime for dominating electric field and the cyclotron-like regime of motion for dominating magnetic field, exhibit a characteristic frequency dependence of the wavepacket oscillations on the external fields. The REOS measurements supplement our results achieved by THz-emission spectroscopy by covering a much larger range of experimental parameters because REOS is not affected by absorption by the cryostat windows of our set-up as is the THz radiation at frequencies above 2 THz, and the detection of high oscillation frequencies is possible.
Author(s)
Hummel, A.B.
Blöser, C.
Bauer, T.
Roskos, H.G.
Kosevich, Y.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physica status solidi. B  
DOI
10.1002/pssb.200460703
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V Halbleiter

  • III-V semiconductor

  • superlattice

  • Übergitter

  • optical spectroscopy

  • optische Spektroskopie

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