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  4. Negative luminescence of InAs/GaSb superlattice photodiodes
 
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2006
Journal Article
Title

Negative luminescence of InAs/GaSb superlattice photodiodes

Other Title
Negative Lumineszenz von InAs/GaSb Übergitter-Photodioden
Abstract
The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 µm and 13 µm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient.
Author(s)
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hoffmann, D.
Gin, A.
Hood, A.
Wei, Y.
Razeghi, M.
Journal
Physica status solidi. C  
DOI
10.1002/pssc.200564175
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • negative luminescence

  • negative Lumineszenz

  • radiometric calibration

  • Radiometrie

  • infrared photodiode

  • Infrarot-Photodiode

  • InAs/GaSb superlattice

  • InAs/GaSb Übergitter

  • infrared

  • Infrarot

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