A versatile and cryogenic mHEMT-model including noise

A versatile scalable small signal model for high electron mobility transistors (HEMTs) of gate length 50 nm and 100 nm has been developed. The model covers a large bias range and includes the temperature dependence from 300 K to 15 K. Especially, it is capable to predict the noise behaviour of the transistor in dependence of ambient temperature and frequency.