A broadband low-noise D-band amplifier module in 35 nm mHEMT technology

This paper presents a broadband low-noise amplifier MMIC in D-band (110-170 GHz), manufactured with the Fraunhofer IAF 35 nm metamorphic high electron mobility transistor (mHEMT) technology. The chip size is 1.0 × 2.0 mm(2) and it was packaged into a split-block module with integrated DC-control. Small-signal gain, noise figure and linearity were measured and the reported results demonstrate state of the art values of over 20 dB gain in a 50 GHz bandwidth, noise figure of below 4 dB and a 1-dB compression point of -22 dBm input power.