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Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs
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1983
Journal Article
Title
Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs
Author(s)
Schneider, J.
Kimura, T.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Ennen, H.
Windscheif, J.
Journal
Applied physics. A
DOI
10.1007/BF00617713
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
0.8eV Lumineszenz
AsGa antisite
Temperverhalten