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  4. Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs
 
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1983
Journal Article
Title

Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs

Author(s)
Schneider, J.
Kimura, T.
Kaufmann, U.
Ennen, H.
Windscheif, J.
Journal
Applied physics. A  
DOI
10.1007/BF00617713
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • 0.8eV Lumineszenz

  • AsGa antisite

  • Temperverhalten

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