Batch process for the production of single crystal silicon membranes by the use of SIMOX-wafers

In this work, we report upon a technique for production of single crystal silicon membranes by the use of buried oxide layers as an etch stop. Fabrication starts with a silicon wafer having (100)-orientation. During oxygen implantation and subsequent high temperature annealing, a thin buried silicon dioxide layer of about 5 micrometer is grown on top. In the first experiment, using silicon nitride as a protection layer, large flat membranes up to 1 qcm could be fabricated. Chosing a sandwich layer of oxide/nitride the membranes were found buckling.