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  4. Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
 
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2019
Conference Paper
Title

Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping

Abstract
Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known to change the I-V behaviour of these devices. Trapping also changes the C-V behaviour of the device. In this paper, for the first time, we present a physics-based compact model which captures the I-V and the C-V characteristics of the device in presence of trapping effects consistently with I-V and C-V modelled using the same set of model formulations and physical model parameters. The developed model shows excellent agreement to the measured data. The importance of a consistent I-V and C-V model is also shown.
Author(s)
Hodges, Jason
Macquarie University, Australia
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Raay, Friedbert van  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Khandelwal, Sourabh
Macquarie University, Australia
Mainwork
IEEE MTT-S International Microwave Symposium, IMS 2019  
Conference
International Microwave Symposium (IMS) 2019  
DOI
10.1109/MWSYM.2019.8700738
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride (GaN)

  • high electron mobility transistor (HEMT)

  • charge trapping

  • pulsed I-V

  • pulsed S-parameter

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