Carrier transport in HEMT's analyzed by high-field electroluminescence.

The high-field emission of visible light from GaAs and InGaAs high electron mobility transistors (HEMT's) has been used to analyze the hot-electron conduction processes is these devices. Spectral analysis of this electroluminescence has indicated that emission has several components, due to recombination in different layers of the transistor. Analysis of the luminescence provides insights into the vertical distribution of electrons and holes when the transistor is operated at high biases. This suggess a useful means to study the bias-dependent vertical distribution of carriers in HEMT_s.